Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

60A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

48W Tc

Turn Off Delay Time  

4.9 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.55V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Voltage - Rated DC  

20V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

60A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

48W

Case Connection  

DRAIN

Turn On Delay Time  

41 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8.4m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1190pF @ 10V

Gate Charge (Qg) (Max) @ Vgs  

14nC @ 4.5V

Rise Time  

8.9ns

Vgs (Max)  

±20V

Fall Time (Typ)  

12 ns

Continuous Drain Current (ID)  

60A

Threshold Voltage  

2.1V

JEDEC-95 Code  

TO-252AA

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0084Ohm

Drain to Source Breakdown Voltage  

20V

Pulsed Drain Current-Max (IDM)  

240A

Recovery Time  

19 ns

Height  

2.26mm

Length  

6.73mm

Width  

6.22mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free